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VS-10ETF12PBF Datasheet

VS-10ETF12PBF Cover
DatasheetVS-10ETF12PBF
File Size238.29 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts VS-10ETF12PBF, VS-10ETF10PBF, VS-10ETF10-M3, VS-10ETF12-M3
Description DIODE GEN PURP 1.2KV 10A TO220AC, DIODE GEN PURP 1KV 10A TO220AC, DIODE GEN PURP 1KV 10A TO220AC, DIODE GEN PURP 1.2KV 10A TO220AC

VS-10ETF12PBF - Vishay Semiconductor Diodes Division

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VS-10ETF10-M3 VS-10ETF10-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A TO220AC 651

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VS-10ETF12-M3 VS-10ETF12-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220AC 578

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URL Link

VS-10ETF12PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

VS-10ETF10PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

VS-10ETF10-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

VS-10ETF12-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C