Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-1EFU06-M3/I |
| File Size | 131.41 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-1EFU06-M3/I |
| Description | DIODE GEN PURP 600V 1A DO219AB |
VS-1EFU06-M3/I - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-1EFU06-M3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO219AB | 130 More on Order |
URL Link
www.zouser.com/datasheet/VS-1EFU06-M3/I
|
Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.2V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 32ns Current - Reverse Leakage @ Vr 3µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 175°C |