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VS-40EPF10-M3 Datasheet

VS-40EPF10-M3 Cover
DatasheetVS-40EPF10-M3
File Size257.17 KB
Total Pages9
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 5 part numbers
Associated Parts VS-40EPF10-M3, VS-40EPF12-M3, VS-40EPF10PBF, VS-40EPS12-M3, VS-40EPF12PBF
Description DIODE GEN PURP 1KV 40A TO247AC, DIODE GEN PURP 1.2KV 40A TO247AC, DIODE GEN PURP 1KV 40A TO247AC, DIODE GEN PURP 1.2KV 40A TO247AC, DIODE GEN PURP 1.2KV 40A TO247AC

VS-40EPF10-M3 - Vishay Semiconductor Diodes Division

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VS-40EPF10-M3 Datasheet Page 9

The Products You May Be Interested In

VS-40EPF10-M3 VS-40EPF10-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 40A TO247AC 458

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VS-40EPF12-M3 VS-40EPF12-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 40A TO247AC 530

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VS-40EPF10PBF VS-40EPF10PBF Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 40A TO247AC 232

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VS-40EPS12-M3 VS-40EPS12-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 40A TO247AC 541

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VS-40EPF12PBF VS-40EPF12PBF Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 40A TO247AC 3025

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VS-40EPF10-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

40A

Voltage - Forward (Vf) (Max) @ If

1.4V @ 40A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

450ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AC Modified

Operating Temperature - Junction

-40°C ~ 150°C

VS-40EPF12-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

40A

Voltage - Forward (Vf) (Max) @ If

1.4V @ 40A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

450ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AC Modified

Operating Temperature - Junction

-40°C ~ 150°C

VS-40EPF10PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

40A

Voltage - Forward (Vf) (Max) @ If

1.4V @ 40A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

450ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AC Modified

Operating Temperature - Junction

-40°C ~ 150°C

VS-40EPS12-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

40A

Voltage - Forward (Vf) (Max) @ If

1V @ 20A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AC Modified

Operating Temperature - Junction

-40°C ~ 150°C

VS-40EPF12PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

40A

Voltage - Forward (Vf) (Max) @ If

1.4V @ 40A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

450ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247AC Modified

Operating Temperature - Junction

-40°C ~ 150°C