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| Datasheet | VS-4ESH02-M3/86A |
| File Size | 127.9 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-4ESH02-M3/86A, VS-4ESH02-M3/87A |
| Description | DIODE GEN PURP 200V 4A TO277A, DIODE GEN PURP 200V 4A TO277A |
VS-4ESH02-M3/86A - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 930mV @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 20ns Current - Reverse Leakage @ Vr 2µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 930mV @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 2µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -65°C ~ 175°C |