Datasheet | VS-ETH0806FP-M3 |
File Size | 203.07 KB |
Total Pages | 9 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | VS-ETH0806FP-M3, VS-ETH0806-M3 |
Description | DIODE GEN PURP 600V 8A TO220-2, DIODE GEN PURP 600V 8A TO220-2 |
VS-ETH0806FP-M3 - Vishay Semiconductor Diodes Division
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VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | 3931 More on Order |
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 2.65V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 21ns Current - Reverse Leakage @ Vr 12µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -65°C ~ 175°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 2.65V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 21ns Current - Reverse Leakage @ Vr 12µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |