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| Datasheet | VS-GA200HS60S1 |
| File Size | 151.04 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-GA200HS60S1, VS-GA200HS60S1PBF |
| Description | IGBT 600V 480A 830W, IGBT 600V 480A 830W INT-A-PAK |
VS-GA200HS60S1 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 480A Power - Max 830W Vce(on) (Max) @ Vge, Ic 1.21V @ 15V, 200A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 32.5nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 480A Power - Max 830W Vce(on) (Max) @ Vge, Ic 1.21V @ 15V, 200A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 32.5nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |