Datasheet | VS-GB200TS60NPBF |
File Size | 194.25 KB |
Total Pages | 9 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GB200TS60NPBF |
Description | IGBT 600V 209A 781W INT-A-PAK |
VS-GB200TS60NPBF - Vishay Semiconductor Diodes Division
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VS-GB200TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 209A 781W INT-A-PAK | 356 More on Order |
URL Link
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 209A Power - Max 781W Vce(on) (Max) @ Vge, Ic 2.84V @ 15V, 200A Current - Collector Cutoff (Max) 200µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |