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VS-GB300TH120N Datasheet

VS-GB300TH120N Cover
DatasheetVS-GB300TH120N
File Size127.6 KB
Total Pages7
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB300TH120N
Description IGBT 1200V 500A 1645W INT-A-PAK

VS-GB300TH120N - Vishay Semiconductor Diodes Division

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VS-GB300TH120N VS-GB300TH120N Vishay Semiconductor Diodes Division IGBT 1200V 500A 1645W INT-A-PAK 512

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URL Link

VS-GB300TH120N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

-

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

500A

Power - Max

1645W

Vce(on) (Max) @ Vge, Ic

2.45V @ 15V, 300A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

21.2nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK