Datasheet | VS-GB400TH120U |
File Size | 150.97 KB |
Total Pages | 7 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GB400TH120U |
Description | IGBT 1200V 660A 2660W INT-A-PAK |
VS-GB400TH120U - Vishay Semiconductor Diodes Division
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VS-GB400TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 660A 2660W INT-A-PAK | 482 More on Order |
URL Link
www.zouser.com/datasheet/VS-GB400TH120U
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 660A Power - Max 2660W Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 400A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 33.7nF @ 30V Input Standard NTC Thermistor No Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 4) Supplier Device Package Double INT-A-PAK |