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VS-GB90DA60U Datasheet

VS-GB90DA60U Cover
DatasheetVS-GB90DA60U
File Size273.45 KB
Total Pages10
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB90DA60U
Description TRANSISTOR INSLTED GATE BIPOLAR

VS-GB90DA60U - Vishay Semiconductor Diodes Division

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VS-GB90DA60U VS-GB90DA60U Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR 534

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URL Link

VS-GB90DA60U

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

NPT

Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

147A

Power - Max

625W

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 100A

Current - Collector Cutoff (Max)

100µA

Input Capacitance (Cies) @ Vce

-

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SOT-227-4

Supplier Device Package

SOT-227