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VS-GB90SA120U Datasheet

VS-GB90SA120U Cover
DatasheetVS-GB90SA120U
File Size282.71 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB90SA120U
Description TRANSISTOR INSLTED GATE BIPOLAR

VS-GB90SA120U - Vishay Semiconductor Diodes Division

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VS-GB90SA120U VS-GB90SA120U Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR 296

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URL Link

VS-GB90SA120U

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

NPT

Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

149A

Power - Max

862W

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 75A

Current - Collector Cutoff (Max)

250µA

Input Capacitance (Cies) @ Vce

-

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SOT-227-4

Supplier Device Package

SOT-227