Datasheet | VS-GT50TP120N |
File Size | 96.27 KB |
Total Pages | 6 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GT50TP120N |
Description | IGBT 1200V 100A 405W INT-A-PAK |
VS-GT50TP120N - Vishay Semiconductor Diodes Division
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VS-GT50TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 100A 405W INT-A-PAK | 449 More on Order |
URL Link
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 100A Power - Max 405W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 50A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 6.24nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |