Datasheet | VS-HFA08TB120-N3 |
File Size | 118.16 KB |
Total Pages | 8 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | VS-HFA08TB120-N3, VS-HFA08TB120PBF |
Description | DIODE GEN PURP 1.2KV 8A TO220AC, DIODE GEN PURP 1.2KV 8A TO220AC |
VS-HFA08TB120-N3 - Vishay Semiconductor Diodes Division
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VS-HFA08TB120-N3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | 484 More on Order |
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VS-HFA08TB120PBF | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 8A TO220AC | 2198 More on Order |
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series HEXFRED® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 3.3V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 95ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series HEXFRED® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 3.3V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 95ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |