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VS-HFA08TB60-N3 Datasheet

VS-HFA08TB60-N3 Cover
DatasheetVS-HFA08TB60-N3
File Size140.47 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-HFA08TB60-N3, VS-HFA08TB60PBF
Description DIODE GEN PURP 600V 8A TO220AC, DIODE GEN PURP 600V 8A TO220AC

VS-HFA08TB60-N3 - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

VS-HFA08TB60-N3 VS-HFA08TB60-N3 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220AC 267

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VS-HFA08TB60PBF VS-HFA08TB60PBF Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220AC 225

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VS-HFA08TB60-N3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

HEXFRED®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

55ns

Current - Reverse Leakage @ Vr

5µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C

VS-HFA08TB60PBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

HEXFRED®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

55ns

Current - Reverse Leakage @ Vr

5µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C