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VWM200-01P Datasheet

VWM200-01P Cover
DatasheetVWM200-01P
File Size201.56 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VWM200-01P
Description MOSFET 6N-CH 100V 210A V2

VWM200-01P - IXYS

VWM200-01P Datasheet Page 1
VWM200-01P Datasheet Page 2

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URL Link

VWM200-01P

IXYS

Manufacturer

IXYS

Series

-

FET Type

6 N-Channel (3-Phase Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

210A

Rds On (Max) @ Id, Vgs

5.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

V2-PAK

Supplier Device Package

V2-PAK