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ZVN1409ASTZ Datasheet

ZVN1409ASTZ Cover
DatasheetZVN1409ASTZ
File Size49.07 KB
Total Pages3
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts ZVN1409ASTZ, ZVN1409ASTOB, ZVN1409ASTOA
Description MOSFET N-CH 90V 0.01A TO92-3, MOSFET N-CH 90V 0.01A TO92-3, MOSFET N-CH 90V 0.01A TO92-3

ZVN1409ASTZ - Diodes Incorporated

ZVN1409ASTZ Datasheet Page 1
ZVN1409ASTZ Datasheet Page 2
ZVN1409ASTZ Datasheet Page 3

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URL Link

ZVN1409ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

10mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250Ohm @ 5mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6.5pF @ 25V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZVN1409ASTOB

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

10mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250Ohm @ 5mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6.5pF @ 25V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ZVN1409ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

10mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250Ohm @ 5mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6.5pF @ 25V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3