Datasheet | ZVN1409ASTZ |
File Size | 49.07 KB |
Total Pages | 3 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | ZVN1409ASTZ, ZVN1409ASTOB, ZVN1409ASTOA |
Description | MOSFET N-CH 90V 0.01A TO92-3, MOSFET N-CH 90V 0.01A TO92-3, MOSFET N-CH 90V 0.01A TO92-3 |
ZVN1409ASTZ - Diodes Incorporated
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ZVN1409ASTZ | Diodes Incorporated | MOSFET N-CH 90V 0.01A TO92-3 | 249 More on Order |
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ZVN1409ASTOB | Diodes Incorporated | MOSFET N-CH 90V 0.01A TO92-3 | 452 More on Order |
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ZVN1409ASTOA | Diodes Incorporated | MOSFET N-CH 90V 0.01A TO92-3 | 214 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Current - Continuous Drain (Id) @ 25°C 10mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs(th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6.5pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Current - Continuous Drain (Id) @ 25°C 10mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs(th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6.5pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Current - Continuous Drain (Id) @ 25°C 10mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs(th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6.5pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |