Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ZVN2120ASTZ |
| File Size | 125.63 KB |
| Total Pages | 3 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | ZVN2120ASTZ, ZVN2120ASTOB, ZVN2120ASTOA, ZVN2120A |
| Description | MOSFET N-CH 200V 0.18A TO92-3, MOSFET N-CH 200V 0.18A TO92-3, MOSFET N-CH 200V 0.18A TO92-3, MOSFET N-CH 200V 0.18A TO92-3 |
ZVN2120ASTZ - Diodes Incorporated
The Products You May Be Interested In
 |
ZVN2120ASTZ | Diodes Incorporated | MOSFET N-CH 200V 0.18A TO92-3 | 557 More on Order |
 |
ZVN2120ASTOB | Diodes Incorporated | MOSFET N-CH 200V 0.18A TO92-3 | 471 More on Order |
 |
ZVN2120ASTOA | Diodes Incorporated | MOSFET N-CH 200V 0.18A TO92-3 | 478 More on Order |
 |
ZVN2120A | Diodes Incorporated | MOSFET N-CH 200V 0.18A TO92-3 | 363 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |