Datasheet | ZVP2106GTC |
File Size | 446.44 KB |
Total Pages | 6 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | ZVP2106GTC, ZVP2106GTA |
Description | MOSFET P-CH 60V 0.45A SOT223, MOSFET P-CH 60V 450MA SOT223 |
ZVP2106GTC - Diodes Incorporated
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ZVP2106GTC | Diodes Incorporated | MOSFET P-CH 60V 0.45A SOT223 | 478 More on Order |
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ZVP2106GTA | Diodes Incorporated | MOSFET P-CH 60V 450MA SOT223 | 8429 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 18V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 18V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |