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ZXMN10A08DN8TC Datasheet

ZXMN10A08DN8TC Cover
DatasheetZXMN10A08DN8TC
File Size179.62 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts ZXMN10A08DN8TC, ZXMN10A08DN8TA
Description MOSFET 2N-CH 100V 1.6A 8SOIC, MOSFET 2N-CH 100V 1.6A 8-SOIC

ZXMN10A08DN8TC - Diodes Incorporated

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URL Link

ZXMN10A08DN8TC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.6A

Rds On (Max) @ Id, Vgs

250mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 50V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

ZXMN10A08DN8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.6A

Rds On (Max) @ Id, Vgs

250mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 50V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP