Semiconductors
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| Datasheet | ZXMN10A25KTC |
| File Size | 187.75 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ZXMN10A25KTC, ZXMN10A25K |
| Description | MOSFET N-CH 100V 4.2A DPAK, MOSFET N-CH 100V 4.2A DPAK |
ZXMN10A25KTC - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.16nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 859pF @ 50V FET Feature - Power Dissipation (Max) 2.11W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.16nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 859pF @ 50V FET Feature - Power Dissipation (Max) 2.11W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |