Datasheet | ZXMN2B03E6TA |
File Size | 1,169.91 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | ZXMN2B03E6TA |
Description | MOSFET N-CH 20V 4.3A SOT23-6 |
ZXMN2B03E6TA - Diodes Incorporated
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ZXMN2B03E6TA | Diodes Incorporated | MOSFET N-CH 20V 4.3A SOT23-6 | 513 More on Order |
URL Link
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 40mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 10V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-6 Package / Case SOT-23-6 |