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ZXMN3G32DN8TA Datasheet

ZXMN3G32DN8TA Cover
DatasheetZXMN3G32DN8TA
File Size444.85 KB
Total Pages8
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts ZXMN3G32DN8TA
Description MOSFET 2N-CH 30V 5.5A 8SOIC

ZXMN3G32DN8TA - Diodes Incorporated

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ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8SOIC 4864

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URL Link

ZXMN3G32DN8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.5A

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

472pF @ 15V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO