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2SA1013-O,T6MIBF(J


Part Number 2SA1013-O,T6MIBF(J
Zouser Part # 2SA1013-O-T6MIBF-J
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 1A 160V TO226-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA1013-O,T6MIBF(J PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock297 - More on Order
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2SA1013-O,T6MIBF(J Specifications

Part Number 2SA1013-O,T6MIBF(J
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V
Power - Max 900mW
Frequency - Transition 50MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92L

2SA1013-O,T6MIBF(J Documents

2SA1013-O, 2SA1013-O Datasheet (Total Pages: 5, Size: 178.57 KB)
2SA1013-O Datasheet Cover2SA1013-O Datasheet Page 22SA1013-O Datasheet Page 32SA1013-O Datasheet Page 42SA1013-O Datasheet Page 5

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