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2SA1020-O(TE6,F,M)
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2SA1020-O(TE6,F,M)


Part Number 2SA1020-O(TE6,F,M)
Zouser Part # 2SA1020-O-TE6-F-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 2A 50V TO226-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA1020-O(TE6,F,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock478 - More on Order
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2SA1020-O(TE6,F,M) Specifications

Part Number 2SA1020-O(TE6,F,M)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V
Power - Max 900mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD

2SA1020-O(TE6,F,M) Documents

2SA1020-O(TE6, 2SA1020-O(TE6 Datasheet (Total Pages: 5, Size: 168.44 KB)
2SA1020-Y Datasheet Cover2SA1020-Y Datasheet Page 22SA1020-Y Datasheet Page 32SA1020-Y Datasheet Page 42SA1020-Y Datasheet Page 5

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