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2SA1930,LBS2DIAQ(J |
|
| Part Number | 2SA1930,LBS2DIAQ(J |
| Zouser Part # | 2SA1930-LBS2DIAQ-J |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single |
| Description | TRANS PNP 2A 180V TO220-3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SA1930,LBS2DIAQ(J PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 538 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
2SA1930,LBS2DIAQ(J Specifications
| Part Number | 2SA1930,LBS2DIAQ(J | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 180V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A | |
| Current - Collector Cutoff (Max) | 5µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V | |
| Power - Max | 2W | |
| Frequency - Transition | 200MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220NIS |
2SA1930,LBS2DIAQ(J Documents
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