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2SA965-O,F(J


Part Number 2SA965-O,F(J
Zouser Part # 2SA965-O-F-J
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 800MA 120V TO226-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SA965-O,F(J PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock477 - More on Order
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2SA965-O,F(J Specifications

Part Number 2SA965-O,F(J
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
Power - Max 900mW
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package LSTM

2SA965-O,F(J Documents

2SA965-O, 2SA965-O Datasheet (Total Pages: 4, Size: 144.58 KB)
2SA965-Y Datasheet Cover2SA965-Y Datasheet Page 22SA965-Y Datasheet Page 32SA965-Y Datasheet Page 4

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