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2SD2257(Q,M)
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2SD2257(Q,M)


Part Number 2SD2257(Q,M)
Zouser Part # 2SD2257-Q-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN 3A 100V TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SD2257(Q,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock309 - More on Order
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Lead-TimeTo be Confirmed
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2SD2257(Q,M) Specifications

Part Number 2SD2257(Q,M)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Power - Max 2W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS

2SD2257(Q,M) Documents

2SD2257(Q, 2SD2257(Q Datasheet (Total Pages: 4, Size: 154.39 KB)
2SD2257 Datasheet Cover2SD2257 Datasheet Page 22SD2257 Datasheet Page 32SD2257 Datasheet Page 4

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