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2SJ360(F)
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2SJ360(F)


Part Number 2SJ360(F)
Zouser Part # 2SJ360-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V 1A SC-62
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SJ360(F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock446 - More on Order
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Lead-TimeTo be Confirmed
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2SJ360(F) Specifications

Part Number 2SJ360(F)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PW-MINI
Package / Case TO-243AA

2SJ360(F) Documents

2SJ360(F), 2SJ360(F) Datasheet (Total Pages: 6, Size: 209.31 KB)
2SJ360(TE12L Datasheet Cover2SJ360(TE12L Datasheet Page 22SJ360(TE12L Datasheet Page 32SJ360(TE12L Datasheet Page 42SJ360(TE12L Datasheet Page 52SJ360(TE12L Datasheet Page 6

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