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2SJ668(TE16L1,NQ)


Part Number 2SJ668(TE16L1,NQ)
Zouser Part # 2SJ668-TE16L1-NQ
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CHANNEL 60V 5A PW-MOLD
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SJ668(TE16L1,NQ) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock326 - More on Order
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2SJ668(TE16L1,NQ) Specifications

Part Number 2SJ668(TE16L1,NQ)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIII
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package PW-MOLD
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

2SJ668(TE16L1,NQ) Documents

2SJ668(TE16L1, 2SJ668(TE16L1 Datasheet (Total Pages: 6, Size: 192.06 KB)
2SJ668(TE16L1 Datasheet Cover2SJ668(TE16L1 Datasheet Page 22SJ668(TE16L1 Datasheet Page 32SJ668(TE16L1 Datasheet Page 42SJ668(TE16L1 Datasheet Page 52SJ668(TE16L1 Datasheet Page 6

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