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2SJ668(TE16L1,NQ) |
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Part Number | 2SJ668(TE16L1,NQ) |
Zouser Part # | 2SJ668-TE16L1-NQ |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CHANNEL 60V 5A PW-MOLD |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | 2SJ668(TE16L1,NQ) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 326 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
2SJ668(TE16L1,NQ) Specifications
Part Number | 2SJ668(TE16L1,NQ) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSIII | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
Rds On (Max) @ Id, Vgs | 170mOhm @ 2.5A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 20W (Tc) | |
Operating Temperature | 150°C | |
Mounting Type | Surface Mount | |
Supplier Device Package | PW-MOLD | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
2SJ668(TE16L1,NQ) Documents
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