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2SK2719(F)
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2SK2719(F)


Part Number 2SK2719(F)
Zouser Part # 2SK2719-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 900V 3A TO-3PN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SK2719(F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock354 - More on Order
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2SK2719(F) Specifications

Part Number 2SK2719(F)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

2SK2719(F) Documents

2SK2719(F), 2SK2719(F) Datasheet (Total Pages: 5, Size: 288.78 KB)
2SK2719(F) Datasheet Cover2SK2719(F) Datasheet Page 22SK2719(F) Datasheet Page 32SK2719(F) Datasheet Page 42SK2719(F) Datasheet Page 5

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