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2SK3309(Q)


Part Number 2SK3309(Q)
Zouser Part # 2SK3309-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 450V 10A TO220FL
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SK3309(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock580 - More on Order
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2SK3309(Q) Specifications

Part Number 2SK3309(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 10V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FL
Package / Case TO-220-3, Short Tab

2SK3309(Q) Documents

2SK3309(Q), 2SK3309(Q) Datasheet (Total Pages: 6, Size: 225.5 KB)
2SK3309(TE24L Datasheet Cover2SK3309(TE24L Datasheet Page 22SK3309(TE24L Datasheet Page 32SK3309(TE24L Datasheet Page 42SK3309(TE24L Datasheet Page 52SK3309(TE24L Datasheet Page 6

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