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2SK3868(Q,M)


Part Number 2SK3868(Q,M)
Zouser Part # 2SK3868-Q-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 5A TO220SIS
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SK3868(Q,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock357 - More on Order
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Lead-TimeTo be Confirmed
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2SK3868(Q,M) Specifications

Part Number 2SK3868(Q,M)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

2SK3868(Q,M) Documents

2SK3868(Q, 2SK3868(Q Datasheet (Total Pages: 6, Size: 209.9 KB)
2SK3868(Q Datasheet Cover2SK3868(Q Datasheet Page 22SK3868(Q Datasheet Page 32SK3868(Q Datasheet Page 42SK3868(Q Datasheet Page 52SK3868(Q Datasheet Page 6

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