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BSC029N025S G


Part Number BSC029N025S G
Zouser Part # BSC029N025S-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 100A TDSON-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSC029N025S G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock289 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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BSC029N025S G Specifications

Part Number BSC029N025S G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5090pF @ 15V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN

BSC029N025S G Documents

BSC029N025S G, BSC029N025S G Datasheet (Total Pages: 10, Size: 376.93 KB)
BSC029N025S G Datasheet CoverBSC029N025S G Datasheet Page 2BSC029N025S G Datasheet Page 3BSC029N025S G Datasheet Page 4BSC029N025S G Datasheet Page 5BSC029N025S G Datasheet Page 6BSC029N025S G Datasheet Page 7BSC029N025S G Datasheet Page 8BSC029N025S G Datasheet Page 9BSC029N025S G Datasheet Page 10

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