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BSC079N10NSGATMA1


Part Number BSC079N10NSGATMA1
Zouser Part # BSC079N10NSGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TDSON-8
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models BSC079N10NSGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock371 - More on Order
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BSC079N10NSGATMA1 Specifications

Part Number BSC079N10NSGATMA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 50V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN

BSC079N10NSGATMA1 Documents

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