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BSC094N03S G


Part Number BSC094N03S G
Zouser Part # BSC094N03S-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 35A TDSON-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSC094N03S G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock383 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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BSC094N03S G Specifications

Part Number BSC094N03S G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14.6A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 15V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN

BSC094N03S G Documents

BSC094N03S G, BSC094N03S G Datasheet (Total Pages: 10, Size: 634.2 KB)
BSC094N03S G Datasheet CoverBSC094N03S G Datasheet Page 2BSC094N03S G Datasheet Page 3BSC094N03S G Datasheet Page 4BSC094N03S G Datasheet Page 5BSC094N03S G Datasheet Page 6BSC094N03S G Datasheet Page 7BSC094N03S G Datasheet Page 8BSC094N03S G Datasheet Page 9BSC094N03S G Datasheet Page 10

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