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BSP295E6327T


Part Number BSP295E6327T
Zouser Part # BSP295E6327T
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 1.8A SOT223
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSP295E6327T PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock403 - More on Order
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BSP295E6327T Specifications

Part Number BSP295E6327T
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

BSP295E6327T Documents

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