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BSP298 E6327


Part Number BSP298 E6327
Zouser Part # BSP298-E6327
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 400V 500MA SOT-223
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSP298 E6327 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock458 - More on Order
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BSP298 E6327 Specifications

Part Number BSP298 E6327
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

BSP298 E6327 Documents

BSP298 E6327, BSP298 E6327 Datasheet (Total Pages: 10, Size: 373.1 KB)
BSP298L6327HUSA1 Datasheet CoverBSP298L6327HUSA1 Datasheet Page 2BSP298L6327HUSA1 Datasheet Page 3BSP298L6327HUSA1 Datasheet Page 4BSP298L6327HUSA1 Datasheet Page 5BSP298L6327HUSA1 Datasheet Page 6BSP298L6327HUSA1 Datasheet Page 7BSP298L6327HUSA1 Datasheet Page 8BSP298L6327HUSA1 Datasheet Page 9BSP298L6327HUSA1 Datasheet Page 10

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