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BSP300H6327XUSA1


Part Number BSP300H6327XUSA1
Zouser Part # BSP300H6327XUSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 190MA SOT-223
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models BSP300H6327XUSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock3,576 - More on Order
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BSP300H6327XUSA1 Specifications

Part Number BSP300H6327XUSA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

BSP300H6327XUSA1 Documents

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