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BSZ120P03NS3EGATMA1


Part Number BSZ120P03NS3EGATMA1
Zouser Part # BSZ120P03NS3EGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 30V 40A TSDSON-8
Lifecycle Last Time Buy
RoHS No RoHS Information
EDA/CAD Models BSZ120P03NS3EGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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BSZ120P03NS3EGATMA1 Specifications

Part Number BSZ120P03NS3EGATMA1
Brand Infineon Technologies
Lifecycle Last Time Buy
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 15V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN

BSZ120P03NS3EGATMA1 Documents

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