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BUK9E2R8-60E,127
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BUK9E2R8-60E,127


Part Number BUK9E2R8-60E,127
Zouser Part # BUK9E2R8-60E-127
Manufacturer NXP
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 120A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BUK9E2R8-60E,127 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock376 - More on Order
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Lead-TimeTo be Confirmed
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BUK9E2R8-60E,127 Specifications

Part Number BUK9E2R8-60E,127
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer NXP USA Inc.
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17450pF @ 25V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9E2R8-60E,127 Documents

BUK9E2R8-60E, BUK9E2R8-60E Datasheet (Total Pages: 14, Size: 328.53 KB)
BUK9E2R8-60E Datasheet CoverBUK9E2R8-60E Datasheet Page 2BUK9E2R8-60E Datasheet Page 3BUK9E2R8-60E Datasheet Page 4BUK9E2R8-60E Datasheet Page 5BUK9E2R8-60E Datasheet Page 6BUK9E2R8-60E Datasheet Page 7BUK9E2R8-60E Datasheet Page 8BUK9E2R8-60E Datasheet Page 9BUK9E2R8-60E Datasheet Page 10BUK9E2R8-60E Datasheet Page 11BUK9E2R8-60E Datasheet Page 12BUK9E2R8-60E Datasheet Page 13BUK9E2R8-60E Datasheet Page 14

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