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DF200R12W1H3B27BOMA1


Part Number DF200R12W1H3B27BOMA1
Zouser Part # DF200R12W1H3B27BOMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsIGBTs - Modules
Description IGBT MODULE VCES 1200V 200A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DF200R12W1H3B27BOMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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DF200R12W1H3B27BOMA1 Specifications

Part Number DF200R12W1H3B27BOMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Modules
Manufacturer Infineon Technologies
Series -
IGBT Type -
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 30A
Power - Max 375W
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 2nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

DF200R12W1H3B27BOMA1 Documents

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