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DRDNB26W-7
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DRDNB26W-7


Part Number DRDNB26W-7
Zouser Part # DRDNB26W-7
Manufacturer Diodes Incorporated
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN/DIODE SOT363
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models DRDNB26W-7 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock285 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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DRDNB26W-7 Specifications

Part Number DRDNB26W-7
Brand Diodes Incorporated
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer Diodes Incorporated
Series -
Transistor Type NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 220 Ohms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363

DRDNB26W-7 Documents

DRDNB26W-7, DRDNB26W-7 Datasheet (Total Pages: 9, Size: 348.93 KB)
DRDNB26W-7 Datasheet CoverDRDNB26W-7 Datasheet Page 2DRDNB26W-7 Datasheet Page 3DRDNB26W-7 Datasheet Page 4DRDNB26W-7 Datasheet Page 5DRDNB26W-7 Datasheet Page 6DRDNB26W-7 Datasheet Page 7DRDNB26W-7 Datasheet Page 8DRDNB26W-7 Datasheet Page 9

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