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EPC2012C


Part Number EPC2012C
Zouser Part # EPC2012C
Manufacturer EPC
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description GANFET TRANS 200V 5A BUMPED DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models EPC2012C PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock15,786 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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EPC2012C Specifications

Part Number EPC2012C
Brand EPC
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer EPC
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (4-Solder Bar)
Package / Case Die

EPC2012C Documents

EPC2012C, EPC2012C Datasheet (Total Pages: 6, Size: 1,143.19 KB)
EPC2012C Datasheet CoverEPC2012C Datasheet Page 2EPC2012C Datasheet Page 3EPC2012C Datasheet Page 4EPC2012C Datasheet Page 5EPC2012C Datasheet Page 6

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