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EPC2019


Part Number EPC2019
Zouser Part # EPC2019
Manufacturer EPC
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description GAN TRANS 200V 8.5A BUMPED DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models EPC2019 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock11,862 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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EPC2019 Specifications

Part Number EPC2019
Brand EPC
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer EPC
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

EPC2019 Documents

EPC2019, EPC2019 Datasheet (Total Pages: 6, Size: 1,212.59 KB)
EPC2019 Datasheet CoverEPC2019 Datasheet Page 2EPC2019 Datasheet Page 3EPC2019 Datasheet Page 4EPC2019 Datasheet Page 5EPC2019 Datasheet Page 6

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