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EPC2100ENG


Part Number EPC2100ENG
Zouser Part # EPC2100ENG
Manufacturer EPC
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description GAN TRANS 2N-CH 30V BUMPED DIE
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models EPC2100ENG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock185 - More on Order
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EPC2100ENG Specifications

Part Number EPC2100ENG
Brand EPC
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer EPC
Series eGaN®
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

EPC2100ENG Documents

EPC2100ENG, EPC2100ENG Datasheet (Total Pages: 9, Size: 2,114.1 KB)
EPC2100ENG Datasheet CoverEPC2100ENG Datasheet Page 2EPC2100ENG Datasheet Page 3EPC2100ENG Datasheet Page 4EPC2100ENG Datasheet Page 5EPC2100ENG Datasheet Page 6EPC2100ENG Datasheet Page 7EPC2100ENG Datasheet Page 8EPC2100ENG Datasheet Page 9

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