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EPC2106ENGRT
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EPC2106ENGRT


Part Number EPC2106ENGRT
Zouser Part # EPC2106ENGRT
Manufacturer EPC
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description GAN TRANS 2N-CH 100V BUMPED DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models EPC2106ENGRT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock10,510 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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EPC2106ENGRT Specifications

Part Number EPC2106ENGRT
Brand EPC
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer EPC
Series eGaN®
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

EPC2106ENGRT Documents

EPC2106ENGRT, EPC2106ENGRT Datasheet (Total Pages: 7, Size: 1,564.58 KB)
EPC2106ENGRT Datasheet CoverEPC2106ENGRT Datasheet Page 2EPC2106ENGRT Datasheet Page 3EPC2106ENGRT Datasheet Page 4EPC2106ENGRT Datasheet Page 5EPC2106ENGRT Datasheet Page 6EPC2106ENGRT Datasheet Page 7

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