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FQI10N60CTU


Part Number FQI10N60CTU
Zouser Part # FQI10N60CTU
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 9.5A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models FQI10N60CTU PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock408 - More on Order
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Lead-TimeTo be Confirmed
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FQI10N60CTU Specifications

Part Number FQI10N60CTU
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

FQI10N60CTU Documents

FQI10N60CTU, FQI10N60CTU Datasheet (Total Pages: 9, Size: 614.4 KB)
FQB10N60CTM Datasheet CoverFQB10N60CTM Datasheet Page 2FQB10N60CTM Datasheet Page 3FQB10N60CTM Datasheet Page 4FQB10N60CTM Datasheet Page 5FQB10N60CTM Datasheet Page 6FQB10N60CTM Datasheet Page 7FQB10N60CTM Datasheet Page 8FQB10N60CTM Datasheet Page 9

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