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FQI11P06TU


Part Number FQI11P06TU
Zouser Part # FQI11P06TU
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V 11.4A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models FQI11P06TU PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock380 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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FQI11P06TU Specifications

Part Number FQI11P06TU
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series QFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 53W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

FQI11P06TU Documents

FQI11P06TU, FQI11P06TU Datasheet (Total Pages: 9, Size: 1,040.71 KB)
FQI11P06TU Datasheet CoverFQI11P06TU Datasheet Page 2FQI11P06TU Datasheet Page 3FQI11P06TU Datasheet Page 4FQI11P06TU Datasheet Page 5FQI11P06TU Datasheet Page 6FQI11P06TU Datasheet Page 7FQI11P06TU Datasheet Page 8FQI11P06TU Datasheet Page 9

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