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FQI4N20LTU


Part Number FQI4N20LTU
Zouser Part # FQI4N20LTU
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 3.8A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models FQI4N20LTU PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock508 - More on Order
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Lead-TimeTo be Confirmed
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FQI4N20LTU Specifications

Part Number FQI4N20LTU
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

FQI4N20LTU Documents

FQI4N20LTU, FQI4N20LTU Datasheet (Total Pages: 9, Size: 519.06 KB)
FQB4N20LTM Datasheet CoverFQB4N20LTM Datasheet Page 2FQB4N20LTM Datasheet Page 3FQB4N20LTM Datasheet Page 4FQB4N20LTM Datasheet Page 5FQB4N20LTM Datasheet Page 6FQB4N20LTM Datasheet Page 7FQB4N20LTM Datasheet Page 8FQB4N20LTM Datasheet Page 9

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