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GA100JT12-227
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GA100JT12-227


Part Number GA100JT12-227
Zouser Part # GA100JT12-227
Manufacturer GeneSiC Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description TRANS SJT 1200V 160A SOT227
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GA100JT12-227 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock571 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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GA100JT12-227 Specifications

Part Number GA100JT12-227
Brand GeneSiC Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Series -
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 10mOhm @ 100A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 800V
FET Feature -
Power Dissipation (Max) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC

GA100JT12-227 Documents

GA100JT12-227, GA100JT12-227 Datasheet (Total Pages: 12, Size: 1,387.62 KB)
GA100JT12-227 Datasheet CoverGA100JT12-227 Datasheet Page 2GA100JT12-227 Datasheet Page 3GA100JT12-227 Datasheet Page 4GA100JT12-227 Datasheet Page 5GA100JT12-227 Datasheet Page 6GA100JT12-227 Datasheet Page 7GA100JT12-227 Datasheet Page 8GA100JT12-227 Datasheet Page 9GA100JT12-227 Datasheet Page 10GA100JT12-227 Datasheet Page 11GA100JT12-227 Datasheet Page 12

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